| 4H-SiC衬底上同质快速外延生长4H-SiC外延层的方法 | |
| 刘斌; 孙国胜; 刘兴昉; 董林; 郑柳; 闫果果; 刘胜北; 张峰; 赵万顺; 王雷; 曾一平 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-05-28 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2014-03-11 |
| Application Number | CN201410086800.X |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25762 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 刘斌,孙国胜,刘兴昉,等. 4H-SiC衬底上同质快速外延生长4H-SiC外延层的方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4H-SiC衬底上同质快速外延生长4H-（657KB） | 限制开放 | License | Application Full Text | |||
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