Knowledge Management System Of Institute of Semiconductors,CAS
| 一种高晶体质量超细砷化铟纳米线生长方法 | |
| 赵建华; 潘东 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2013-04-24 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体物理 |
| Application Date | 2013-01-22 |
| Application Number | CN201310024040.5 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25693 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | 赵建华,潘东. 一种高晶体质量超细砷化铟纳米线生长方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 一种高晶体质量超细砷化铟纳米线生长方法.（3401KB） | 限制开放 | License | Application Full Text | |||
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