| 双全息曝光制备量子级联激光器掩埋双周期光栅方法 | |
| 姚丹阳; 张锦川; 闫方亮; 刘俊岐; 王利军; 刘峰奇; 王占国 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2013-05-08 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2013-01-25 |
| Application Number | CN201310028764.7 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25685 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 姚丹阳,张锦川,闫方亮,等. 双全息曝光制备量子级联激光器掩埋双周期光栅方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 双全息曝光制备量子级联激光器掩埋双周期光（1010KB） | 限制开放 | License | Application Full Text | |||
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