双全息曝光制备量子级联激光器掩埋双周期光栅方法 | |
姚丹阳; 张锦川; 闫方亮; 刘俊岐; 王利军; 刘峰奇; 王占国 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2013-05-08 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体材料 |
Application Date | 2013-01-25 |
Application Number | CN201310028764.7 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25685 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | 姚丹阳,张锦川,闫方亮,等. 双全息曝光制备量子级联激光器掩埋双周期光栅方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
双全息曝光制备量子级联激光器掩埋双周期光(1010KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment