| 制备低密度、长波长InAs/GaAs 量子点的方法 | |
| 张世著; 叶小玲; 徐波; 王占国 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2013-06-05 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2013-01-28 |
| Application Number | CN201310032256.6 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25680 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 张世著,叶小玲,徐波,等. 制备低密度、长波长InAs/GaAs 量子点的方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 制备低密度、长波长InAs_GaAs+量（401KB） | 限制开放 | License | Application Full Text | |||
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