SEMI OpenIR  > 中科院半导体材料科学重点实验室
制备低密度、长波长InAs/GaAs 量子点的方法
张世著; 叶小玲; 徐波; 王占国
Rights Holder中国科学院半导体研究所
Date Available2013-06-05
Subject Area半导体材料
Application Date2013-01-28
Application NumberCN201310032256.6
Document Type专利
Recommended Citation
GB/T 7714
张世著,叶小玲,徐波,等. 制备低密度、长波长InAs/GaAs 量子点的方法.
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