| 基于表面等离子体效应增强吸收的InGaAs光探测器 | |
| 宋国峰; 许斌宗; 韦欣; 刘杰涛; 相春平; 付东; 徐云 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-07-23 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2014-05-04 |
| Application Number | CN201410184396.X |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25673 |
| Collection | 纳米光电子实验室 |
| Recommended Citation GB/T 7714 | 宋国峰,许斌宗,韦欣,等. 基于表面等离子体效应增强吸收的InGaAs光探测器. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 基于表面等离子体效应增强吸收的InGaA（1226KB） | 限制开放 | License | Application Full Text | |||
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