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输出功率和光谱形状独立可调的发光二极管的制作方法
陈红梅; 金鹏; 王占国
Rights Holder中国科学院半导体研究所
Date Available2014-06-28
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-03-07
Application NumberCN201410083290.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25668
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
陈红梅,金鹏,王占国. 输出功率和光谱形状独立可调的发光二极管的制作方法.
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