| 硅基高迁移率沟道CMOS的制备方法 | |
| 周旭亮; 于红艳; 李士颜; 潘教青; 王圩 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2013-08-21 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2013-05-14 |
| Application Number | CN201310176286.4 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25617 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 周旭亮,于红艳,李士颜,等. 硅基高迁移率沟道CMOS的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 硅基高迁移率沟道CMOS的制备方法.pd（532KB） | 限制开放 | License | Application Full Text | |||
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