| 表面等离激元增强GaN基纳米柱LED及制备方法 | |
| 于治国; 赵丽霞; 魏学成; 王军喜; 李晋闽 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2013-09-25 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2013-05-22 |
| Application Number | CN201310193912.0 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25607 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 于治国,赵丽霞,魏学成,等. 表面等离激元增强GaN基纳米柱LED及制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 表面等离激元增强GaN基纳米柱LED及制（521KB） | 限制开放 | License | Application Full Text | |||
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