在GaAs纳米线侧壁利用纳米环作为掩膜生长量子点的方法

	在GaAs纳米线侧壁利用纳米环作为掩膜生长量子点的方法
	査国伟; 李密锋; 喻颖; 王莉娟; 徐建星; 尚向军; 倪海桥; 贺振宏; 牛智川
Rights Holder	中国科学院半导体研究所
Date Available	2013-10-23
Country	中国
Subtype	发明
Subject Area	半导体物理
Application Date	2013-07-11
Application Number	CN201310290299.4
Document Type	专利
Identifier	http://ir.semi.ac.cn/handle/172111/25546
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	査国伟,李密锋,喻颖,等. 在GaAs纳米线侧壁利用纳米环作为掩膜生长量子点的方法.

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