SEMI OpenIR  > 中科院半导体材料科学重点实验室
提高AlN外延薄膜荧光强度的方法
王维颖; 毛德丰; 李维; 金鹏; 王占国
Rights Holder中国科学院半导体研究所
Date Available2014-02-12
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-11-19
Application NumberCN201310585868.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25476
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王维颖,毛德丰,李维,等. 提高AlN外延薄膜荧光强度的方法.
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