| 生长半极性GaN厚膜的方法 | |
| 羊建坤; 魏同波; 霍自强; 张勇辉; 胡强; 段瑞飞; 王军喜 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-03-19 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2013-12-31 |
| Application Number | CN201310750779.4 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25394 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 羊建坤,魏同波,霍自强,等. 生长半极性GaN厚膜的方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 生长半极性GaN厚膜的方法.pdf（1673KB） | 限制开放 | License | Application Full Text | |||
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