InAs/GaSb二类超晶格红外探测器 | |
黄建亮; 马文全; 张艳华; 曹玉莲 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2012-07-11 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体材料 |
Application Date | 2012-02-08 |
Application Number | CN201210027372.4 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25384 |
Collection | 纳米光电子实验室 |
Recommended Citation GB/T 7714 | 黄建亮,马文全,张艳华,等. InAs/GaSb二类超晶格红外探测器. |
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File Name/Size | DocType | Version | Access | License | ||
InAs_GaSb二类超晶格红外探测器.(479KB) | 限制开放 | License | Application Full Text |
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