Knowledge Management System Of Institute of Semiconductors,CAS
| 具有超大垂直矫顽力铁磁单晶薄膜的制备方法 | |
| 赵建华; 朱礼军 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2012-07-11 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体物理 |
| Application Date | 2012-02-15 |
| Application Number | CN201210033517.1 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25368 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | 赵建华,朱礼军. 具有超大垂直矫顽力铁磁单晶薄膜的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 具有超大垂直矫顽力铁磁单晶薄膜的制备方法（292KB） | 限制开放 | License | Application Full Text | |||
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