SEMI OpenIR  > 中科院半导体照明研发中心
侧面粗化的发光二极管及其制作方法
谢海忠; 张逸韵; 王兵; 杨华; 李璟; 伊晓燕; 王军喜; 王国宏; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2012-07-18
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-03-02
Application NumberCN201210052920.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25352
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
谢海忠,张逸韵,王兵,等. 侧面粗化的发光二极管及其制作方法.
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侧面粗化的发光二极管及其制作方法.pdf(627KB) 限制开放LicenseApplication Full Text
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