SEMI OpenIR  > 中科院半导体照明研发中心
将氮化镓基发光二极管的外延结构表面粗化的方法
田婷; 张逸韵; 耿雪妮; 李璟; 伊晓燕; 王国宏
Rights Holder中国科学院半导体研究所
Date Available2012-07-04
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-03-06
Application NumberCN201210056638.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25345
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
田婷,张逸韵,耿雪妮,等. 将氮化镓基发光二极管的外延结构表面粗化的方法.
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