氮化铝单晶材料制备方法 | |
杨少延; 魏鸿源; 焦春美; 刘祥林 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2012-12-19 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体材料 |
Application Date | 2012-09-10 |
Application Number | CN201210332652.6 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25323 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | 杨少延,魏鸿源,焦春美,等. 氮化铝单晶材料制备方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
氮化铝单晶材料制备方法.pdf(872KB) | 限制开放 | License | Application Full Text |
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