SEMI OpenIR  > 中科院半导体材料科学重点实验室
氮化铝单晶材料制备方法
杨少延; 魏鸿源; 焦春美; 刘祥林
Rights Holder中国科学院半导体研究所
Date Available2012-12-19
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-09-10
Application NumberCN201210332652.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25323
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
杨少延,魏鸿源,焦春美,等. 氮化铝单晶材料制备方法.
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氮化铝单晶材料制备方法.pdf(872KB) 限制开放LicenseApplication Full Text
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