SEMI OpenIR  > 中科院半导体材料科学重点实验室
掺杂半导体材料生长设备及方法
金鹏; 王占国
Rights Holder中国科学院半导体研究所
Date Available2012-10-17
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-06-29
Application NumberCN201210223493.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25291
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
金鹏,王占国. 掺杂半导体材料生长设备及方法.
Files in This Item:
File Name/Size DocType Version Access License
掺杂半导体材料生长设备及方法.pdf(348KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[金鹏]'s Articles
[王占国]'s Articles
Baidu academic
Similar articles in Baidu academic
[金鹏]'s Articles
[王占国]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[金鹏]'s Articles
[王占国]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.