| 氮化物半导体材料发光二极管及其制备方法 | |
| 司朝; 魏同波; 王军喜; 李晋闽 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2013-01-23 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2012-09-27 |
| Application Number | CN201210375144.6 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25217 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 司朝,魏同波,王军喜,等. 氮化物半导体材料发光二极管及其制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 氮化物半导体材料发光二极管及其制备方法.（588KB） | 限制开放 | License | Application Full Text | |||
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