SEMI OpenIR  > 中科院半导体材料科学重点实验室
铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法; 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法; 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法; 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法
王晓亮; 彭恩超; 王翠梅; 肖红领; 冯春; 姜丽娟; 陈竑
Rights Holder中国科学院半导体研究所
Date Available2013-02-13
Subject Area半导体材料
Application Date2012-11-19
Application NumberCN201210467084.0
Document Type专利
Recommended Citation
GB/T 7714
王晓亮,彭恩超,王翠梅,等. 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法, 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法, 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法, 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法.
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