SEMI OpenIR  > 光电子研究发展中心
下转换荧光材料的制备方法
李乐良; 郑军; 左玉华; 成步文; 王启明; 郑智雄
Rights Holder中国科学院半导体研究所
Date Available2013-03-20 ; 2013-03-20
Country中国
Subtype发明
Subject Area光电子学
Application Date2012-12-04
Application NumberCN201210513687.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25196
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
李乐良,郑军,左玉华,等. 下转换荧光材料的制备方法.
Files in This Item:
File Name/Size DocType Version Access License
下转换荧光材料的制备方法.pdf(358KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[李乐良]'s Articles
[郑军]'s Articles
[左玉华]'s Articles
Baidu academic
Similar articles in Baidu academic
[李乐良]'s Articles
[郑军]'s Articles
[左玉华]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[李乐良]'s Articles
[郑军]'s Articles
[左玉华]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.