SEMI OpenIR  > 中科院半导体照明研发中心
高出光率倒装结构LED的制作方法
刘娜; 谢海忠; 伊晓燕; 王军喜; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-03-13 ; 2013-03-13
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-12-17
Application NumberCN201210548494.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25185
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
刘娜,谢海忠,伊晓燕,等. 高出光率倒装结构LED的制作方法.
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