SEMI OpenIR  > 光电子研究发展中心
制作基于微针阵列皮肤干电极的方法
裴为华; 陈远方; 归强; 陈弘达
Rights Holder中国科学院半导体研究所
Date Available2013-03-27 ; 2013-03-27
Country中国
Subtype发明
Subject Area光电子学
Application Date2012-12-17
Application NumberCN201210549791.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25182
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
裴为华,陈远方,归强,等. 制作基于微针阵列皮肤干电极的方法.
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制作基于微针阵列皮肤干电极的方法.pdf(414KB) 限制开放LicenseApplication Full Text
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