HgTe/CdTe及InAs/GaSb/AlSb低维材料体系的电子态性质

	HgTe/CdTe及InAs/GaSb/AlSb低维材料体系的电子态性质
	庞蜜
Subtype	博士
Thesis Advisor	吴晓光
	2014-05
Degree Grantor	中国科学院大学
Place of Conferral	北京
Degree Discipline	凝聚态物理
Keyword	Hgte/cdte 量子阱 Inas/gasb超晶格 Inas/gasb耦合量子阱二维拓扑绝缘体窄禁带半导体电子态结构磁光吸收谱
Subject Area	半导体物理
Date Available	2014-05-28
Document Type	学位论文
Identifier	http://ir.semi.ac.cn/handle/172111/25021
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	庞蜜. HgTe/CdTe及InAs/GaSb/AlSb低维材料体系的电子态性质[D]. 北京. 中国科学院大学,2014.

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