SEMI OpenIR  > 半导体超晶格国家重点实验室
HgTe/CdTe及InAs/GaSb/AlSb低维材料体系的电子态性质
庞蜜
Subtype博士
Thesis Advisor吴晓光
2014-05
Degree Grantor中国科学院大学
Place of Conferral北京
Degree Discipline凝聚态物理
KeywordHgte/cdte 量子阱 Inas/gasb超晶格 Inas/gasb耦合量子阱 二维拓扑绝缘体 窄禁带半导体 电子态结构 磁光吸收谱
Subject Area半导体物理
Date Available2014-05-28
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25021
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
庞蜜. HgTe/CdTe及InAs/GaSb/AlSb低维材料体系的电子态性质[D]. 北京. 中国科学院大学,2014.
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