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Co掺杂CaO稀磁半导体材料的制备方法; Co掺杂CaO稀磁半导体材料的制备方法
赵婧; 刘喆; 王军喜; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2012-09-09 ; 2012-09-09 ; 2012-09-09
Country中国
Subtype发明
Abstract 一种Co掺杂CaO稀磁半导体材料的制备方法,包括如下步骤:步骤1:将Ca(C2H3O2)2·4H2O和Co(C2H3O2)2·4H2O按比例充分混合并溶解于去离子水中,形成混合液;步骤2:将NaOH溶液缓慢滴入该混合液中,与混合液发生反应,形成沉淀产物;步骤3:从反应后的混合液中过滤出沉淀产物,将该沉淀产物用去离子水多次清洗;步骤4:将清洗后沉淀产物在干燥箱中烘干后进行研磨,得到前驱体粉末;步骤5:将前驱体粉末置于石英舟中,放入管式反应炉的中部,前驱体粉末在Ar气氛下煅烧分解,得到白色的纳米粉末,完成Co掺杂CaO稀磁半导体材料的制备。
metadata_83中科院半导体照明研发中心
Patent NumberCN102351229A
Language中文
Status公开
Application Number CN201110185320.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23504
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
赵婧,刘喆,王军喜,等. Co掺杂CaO稀磁半导体材料的制备方法, Co掺杂CaO稀磁半导体材料的制备方法. CN102351229A.
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