SEMI OpenIR  > 中科院半导体材料科学重点实验室
运用V形沟槽的硅基砷化镓材料的制备; 运用V形沟槽的硅基砷化镓材料的制备
周旭亮; 于红艳; 王宝军; 潘教青; 王圩
Rights Holder中国科学院半导体研究所
Date Available2012-09-09 ; 2012-09-09 ; 2012-09-09
Country中国
Subtype发明
Abstract 一种运用V形沟槽的硅基砷化镓材料的制备方法,包括以下步骤:步骤1:在硅衬底1上生长二氧化硅层;步骤2:采用传统光刻和RIE方法在二氧化硅层上沿着硅衬底的<110>方向刻蚀出沟槽;步骤3:采用KOH湿法刻蚀在沟槽的硅衬底上形成V形沟槽;步骤4:分别用piranha、SC2、HF和去离子水,清洗沟槽底部衬底的V形沟槽;步骤5:采用低压MOCVD的方法,先在沟槽内生长GaAs缓冲层,然后在沟槽内的GaAs缓冲层上生长GaAs顶层;步骤6:采用化学机械抛光的方法,将超出沟槽的GaAs顶层抛光,抛光至与二氧化硅层齐平,完成材料的制备。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN102244007A
Language中文
Status公开
Application Number CN201110206038.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23482
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
周旭亮,于红艳,王宝军,等. 运用V形沟槽的硅基砷化镓材料的制备, 运用V形沟槽的硅基砷化镓材料的制备. CN102244007A.
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