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SiO2/SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法; SiO2/SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法
杜彦东; 韩伟华; 颜伟; 张严波; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2012-09-07 ; 2012-05-02 ; 2012-09-07
Country中国
Subtype发明
Abstract 一种SiO2/SiN双层钝化T型栅AlGaN/GaN?HEMT,包括:一衬底,在衬底上依次生长GaN缓冲层、GaN本征层和AlGaN势垒层;源漏电极,该源漏电极制作在势垒层上面的两侧;一下钝化层,制作在源漏电极之间及势垒层的上面;一上钝化层,制作在源漏电极之间及下钝化层的上面;其中该下钝化层和上钝化层的中间有一条形栅槽;一栅电极,其断面为T形,制作在该下钝化层和上钝化层的条形栅槽内,栅电极上部高于上钝化层的表面。
metadata_83半导体集成技术工程研究中心
Application Date2011-12-01
Patent NumberCN102437182A
Language中文
Status公开
Application Number CN201110392863.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23342
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
杜彦东,韩伟华,颜伟,等. SiO2/SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法, SiO2/SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法. CN102437182A.
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