SEMI OpenIR  > 中科院半导体材料科学重点实验室
基于InGaN插入层的非极性a-plane GaN薄膜的生长及相关物理研究
李志伟
Subtype博士
Thesis Advisor刘祥林 ; 朱勤生
2012
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline材料物理与化学
Subject Area半导体材料
Date Available2012-06-26
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23207
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
李志伟. 基于InGaN插入层的非极性a-plane GaN薄膜的生长及相关物理研究[D]. 北京. 中国科学院研究生院,2012.
Files in This Item:
File Name/Size DocType Version Access License
李志伟论文.pdf(3188KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[李志伟]'s Articles
Baidu academic
Similar articles in Baidu academic
[李志伟]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[李志伟]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.