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HPT结构的InAs/GaSb超晶格红外光电探测器
张宇; 王国伟; 汤宝; 任正伟; 徐应强; 牛智川; 陈良惠
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种HPT结构的InAs/GaSb超晶格红外光电探测器,包括:一GaSb衬底,利用分子束外延方法在GaSb衬底上依次制备出GaSb缓冲层、GaSb收集区、InAs/GaSb超晶格基区、AlGaAsSb基区、AlGaAsSb发射区以及GaSb盖层;一上电极,采用溅射的方法制作在GaSb盖层的表面,该上电极的中间开有一光的入射口;一下电极,采用溅射的方法制作在GaSb衬底的下表面。
metadata_83纳米光电子实验室
Patent NumberCN201010123021.4
Language中文
Status公开
Application NumberCN201010123021.4
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22437
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
张宇,王国伟,汤宝,等. HPT结构的InAs/GaSb超晶格红外光电探测器. CN201010123021.4.
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