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一种复合膜片压力传感器结构
王晓东; 樊中朝; 季安; 邢波; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种复合膜片压力传感器结构,包括:一单晶硅层,该单晶硅层的一面为凹型;一多孔硅层,该多孔硅层生长在单晶硅层凹型的内表面。本发明在不影响低量程传感器灵敏度的前提下,采用多孔硅和单晶硅复合膜片,减小膜片的非线性形变,从而减小膜片挠度,最终达到提高低量程传感器灵敏度或降低非线性的目的。
metadata_83半导体集成技术工程研究中心
Patent NumberCN200810224110.0
Language中文
Status公开
Application NumberCN200810224110.0
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22417
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
王晓东,樊中朝,季安,等. 一种复合膜片压力传感器结构. CN200810224110.0.
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