SEMI OpenIR  > 半导体材料科学中心
在蓝宝石图形衬底上制备无应力GaN厚膜的方法
胡强; 段瑞飞; 魏同波; 杨建坤; 霍自强; 曾一平
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种在蓝宝石图形衬底上制备无应力GaN厚膜的方法,包括以下步骤:步骤1:在C面蓝宝石衬底上淀积一层二氧化硅或氮化硅膜;步骤2:利用常规光刻技术在淀积二氧化硅或氮化硅膜的C面蓝宝石衬底上光刻出沿着[11-20]方向的条形二氧化硅或氮化硅掩模图形;步骤3:通过湿法刻蚀,将光刻的条形二氧化硅或氮化硅掩模图形转移到衬底上;步骤4:腐蚀去掉二氧化硅或氮化硅膜,清洗衬底,得到清洁的蓝宝石图形衬底;步骤5:直接采用氢化物气相外延系统在所得到的蓝宝石图形衬底上外延生长GaN厚膜,完成制备。
metadata_83半导体材料科学中心
Patent NumberCN200910235335.0
Language中文
Status公开
Application NumberCN200910235335.0
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22329
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
胡强,段瑞飞,魏同波,等. 在蓝宝石图形衬底上制备无应力GaN厚膜的方法. CN200910235335.0.
Files in This Item:
File Name/Size DocType Version Access License
CN200910235335.0.pdf(361KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[胡强]'s Articles
[段瑞飞]'s Articles
[魏同波]'s Articles
Baidu academic
Similar articles in Baidu academic
[胡强]'s Articles
[段瑞飞]'s Articles
[魏同波]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[胡强]'s Articles
[段瑞飞]'s Articles
[魏同波]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.