SEMI OpenIR  > 中科院半导体材料科学重点实验室
Cu掺杂p型ZnO薄膜的制备方法
杨晓丽; 陈诺夫; 尹志岗
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract本发明提供一种Cu掺杂p型ZnO薄膜的制备方法,包括如下步骤:步骤1:采用射频磁控溅射方法,将纯度为4N以上的ZnO和高纯Cu粉末混合压制成所需靶材;步骤2:在氩气和氧气混合气体环境中将靶材溅射沉积在衬底之上形成薄膜;步骤3:将形成薄膜的衬底进行退火处理,得到Cu掺杂的p型ZnO薄膜材料。本发明可以解决IB族元素难于实现p型ZnO材料制备的难题。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN201010106765.5
Language中文
Status公开
Application NumberCN201010106765.5
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22227
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
杨晓丽,陈诺夫,尹志岗. Cu掺杂p型ZnO薄膜的制备方法. CN201010106765.5.
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