SEMI OpenIR  > 中科院半导体材料科学重点实验室
垂直发射量子级联激光器结构
郭万红; 刘俊岐; 陆全勇; 张伟; 江宇超; 李路; 王利军; 刘峰奇; 王占国
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract本发明提供一种垂直发射量子级联激光器结构,包括:一衬底,在该衬底上依次生长有波导层、有源层和接触层;金属光栅层,该金属光栅层位于接触层的上面,并且该金属光栅层具有二级布拉格周期。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN201010171511.1
Language中文
Status公开
Application NumberCN201010171511.1
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22207
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
郭万红,刘俊岐,陆全勇,等. 垂直发射量子级联激光器结构. CN201010171511.1.
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