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氮化镓基垂直结构发光二极管转移衬底的腐蚀方法
汪炼成; 郭恩卿; 刘志强; 伊晓燕; 王国宏
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种氮化镓基垂直结构发光二极管转移衬底的腐蚀方法,包括:步骤1:选择一外延结构,该外延结构包括蓝宝石衬底和氮化镓LED层;步骤2:在氮化镓LED层上采用电镀或键合的方法制作一转移衬底;步骤3:减薄转移衬底,然后抛光;步骤4:用激光刻划方法在转移衬底的表面上刻划图形,作为光刻对准标记;步骤5:在作好光刻对准标记的转移衬底上采用光刻方法,通过前烘,匀胶,曝光,显影,坚膜,在转移衬底上面的中间形成光刻胶图形,该光刻胶图形的面积小于转移衬底的面积;步骤6:选择腐蚀液腐蚀掉未被光刻胶图形覆盖的转移衬底,使转移衬底四周形成台面;步骤7:剥离光刻胶,清洗吹干,完成转移衬底的腐蚀。
metadata_83中科院半导体照明研发中心
Patent NumberCN201010251509.5
Language中文
Status公开
Application NumberCN201010251509.5
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22135
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
汪炼成,郭恩卿,刘志强,等. 氮化镓基垂直结构发光二极管转移衬底的腐蚀方法. CN201010251509.5.
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