SEMI OpenIR  > 集成光电子学国家重点实验室
一种生长AlInN单晶外延膜的方法
卢国军; 朱建军; 赵德刚; 刘宗顺; 张书明; 杨辉
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract本发明公开了一种用氮气、氢气混合气作为载气生长高质量AlInN单晶外延膜的方法,包括如下步骤:选择一衬底;将衬底放入金属有机物化学气相沉积系统内,升温至生长温度,同时通入三甲基铟TMIn、三甲基铝TMAl、氨气NH3,氮气N2和适量氢气H2,生长出AlInN单晶外延膜。利用本发明,可以提高AlInN的结晶质量,并改善其表面形貌,提高其表面的平整度。
metadata_83集成光电子学国家重点实验室
Patent NumberCN200810225783.8
Language中文
Status公开
Application NumberCN200810225783.8
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22081
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
卢国军,朱建军,赵德刚,等. 一种生长AlInN单晶外延膜的方法. CN200810225783.8.
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