SEMI OpenIR  > 高性能集成电路实验室
超宽频低相位噪声的集成电感电容压控振荡器; 超宽频低相位噪声的集成电感电容压控振荡器
兰晓明; 颜峻; 石寅
Rights Holder中国科学院半导体研究所
Date Available2010-10-20 ; 2010-10-20
Country中国
Subtype发明
Abstract本发明公开了一种集成电感电容压控振荡器,包括:四个可编程的负阻型LC振荡核心电路;一个与该四个可编程的负阻型LC振荡核心电路相连接的公共输出级;以及一个电流大小可编程的偏置模块,该偏置模块通过受控开关连接于该四个可编程的负阻型LC振荡核心电路。本发明的集成电感电容压控振荡器与普通压控振荡器相比,在调谐范围、相位噪声等方面具有明显的优势。本发明特别适用于高要求的多标准多频段射频无线通信系统。
metadata_83高性能集成电路实验室
Application Date2009-04-15
Patent NumberCN200910081988.8
Language中文
Status公开
Application NumberCN200910081988.8
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/21797
Collection高性能集成电路实验室
Recommended Citation
GB/T 7714
兰晓明,颜峻,石寅. 超宽频低相位噪声的集成电感电容压控振荡器, 超宽频低相位噪声的集成电感电容压控振荡器. CN200910081988.8.
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