| Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer | |
| Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang) | |
| 2011 | |
| Conference Name | 16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14) |
| Source Publication | JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467 |
| Conference Date | AUG 08-13, 2010 |
| Conference Place | Beijing, PEOPLES R CHINA |
| Subject Area | 半导体材料 |
| Indexed By | CPCI（ISTP） |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/21436 |
| Collection | 半导体材料科学中心 |
| Recommended Citation GB/T 7714 | Pan X ,Wei M ,Yang CB ,et al. Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer[C],2011. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Growth of GaN film o（396KB） | 限制开放 | License | Application Full Text | |||
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