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Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate
Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo)
2011
Conference Name3rd International Photonics and OptoElectronics Meetings
Source Publication3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011
Conference DateNOV 02-05, 2010
Conference PlaceWuhan, PEOPLES R CHINA
Subject Area半导体材料
Indexed ByCPCI(ISTP)
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21433
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
Wei M ,Wang XL ,Pan X ,et al. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate[C],2011.
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