| Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate | |
| Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo) | |
| 2011 | |
| Conference Name | 3rd International Photonics and OptoElectronics Meetings |
| Source Publication | 3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011 |
| Conference Date | NOV 02-05, 2010 |
| Conference Place | Wuhan, PEOPLES R CHINA |
| Subject Area | 半导体材料 |
| Indexed By | CPCI（ISTP） |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/21433 |
| Collection | 半导体材料科学中心 |
| Recommended Citation GB/T 7714 | Wei M ,Wang XL ,Pan X ,et al. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate[C],2011. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Influence of AlGaN B（668KB） | 限制开放 | License | Application Full Text | |||
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