|Place of Conferral||北京|
|Keyword||硅基光子学 硅基锗光电探测器 吸收区倍增区分离的雪崩光电二极管 共振腔增强型 波导型|
4. 成功研制了吸收区和倍增区分离的Si基Ge雪崩光电二极管，器件的穿通电压Vpt约为29V，击穿电压Vbd(暗电流等于100μA时的电压)为39.5V。在击穿电压附近，如39V时，SACM-Ge-on-Si APD的增益为40。
Optoelectronics and optical communication technology has developed rapidly as the information industry and bio-medical technology becoming increasingly important. Silicon-based optoelectronic integrated technology is low-cost but effective on achieving popularization and development of optical communication. Silicon-based photodetector is one of the key devices of optical communication system. The Ge-on-Si photodetector has breakthrough progress recently and become the research focus, because it can response to 1.31μm and 1.55μm well.
1. A PIN Ge-on-Si photodetector successfully developed.The dark current density of the device was 46.6mA/cm2 at -1V bias voltage. The quantum efficiency was 40% and 17% at 1.31μm and 1.55μm ; RTA was proposed to decrease the dark current of the Ge-on-Si photodetector.The as-grown Ge-on-Si materials were annealed at 850℃ for 1 minute to reduce the dislocation density.The dark current density of device was 4mA/cm2 at -1V bias voltage,which was the one of best reported results around the world.
2. A PIN Ge-on-SOI photodetector was achived successfully. The corresponding quantum efficiency was 62% and 25% at 1.31μm and 1.55μm,respectively. The 3dB bandwidths of the 30-μm-diameter device was 12.6GHz at reversebias values of 3V.Especially,the 3dB bandwidth of 25-μm-diameter device was 13.4GHz at 1.55μm.At the same time,1×4 Ge-on-SOI PIN photodetector arrays were achived.The four devices in the same array show a good consistency. At the reverse bias of 3V, the bandwidth of the single device was about 13.3GHz.
3. The high saturation power characteristics of Ge-on-Si photodetector was reported for the first time. The 1-dB small-signal compression optical currents were 22mA and 40mA of the 70-μm-diameter device,and the corresponding optical power values were 67.5mW and 110.5mW at reverse-bias of 1 and 2V.
4. Separate Absorption, Charge and Multiplication(SACM) Si-based Ge Avalanche photodetector has been achieved. Its punchthrough voltage was about 29V, breakthrough voltage was 39.5V. The APD exhibited a gain of 40 at 1.31μm and 39V.
5. Using ICP back deep etching technology,the Resonant Cavity Enhanced(RCE) Ge-on-Si photodector was fabricated with a quantum efficiency of 62% at center wavelength of 1.55μm.
6. A lateral waveguide structure Ge-on-SOI photodetector has been designed. Some results of theoretical modeling was described in this thesis.
|Subject Area||半导体物理 ; 半导体器件 ; 光电子学|
|薛海韵. 高性能硅基锗光电探测器的研制[D]. 北京. 中国科学院研究生院,2011.|
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