The fabrication of thick SiO2 layer by anodization

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The fabrication of thick SiO2 layer by anodization
	Ou HY; Yang QQ; Lei HB; Wang QM; Hu XW; Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	International-Union-of-Materials-Research-Societies International Conference on Advanced Materials (IUMRS-ICAM 99)
会议录名称	OPTICAL MATERIALS, 14 (3)
页码	271-275
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0925-3467
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; natl res ctr optoelect technol, beijing 100083, peoples r china
摘要	Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词	Thick Sio2 Layer Porous Silicon Sio2/si Waveguide Device Wave-guides Silicon
学科领域	半导体材料
主办者	Int Union Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14995
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Ou HY,Yang QQ,Lei HB,et al. The fabrication of thick SiO2 layer by anodization[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:271-275.

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