Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si
Wang QY; Tan LW; Wang J; Yu YH; Lin LY; Wang QY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
2002
会议名称Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议录名称INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
页码4271-4274
会议日期JUN 10-14, 2002
会议地点XIAN, PEOPLES R CHINA
出版地JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN0217-9792
部门归属chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
摘要In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.
学科领域半导体材料
主办者Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14871
专题中国科学院半导体研究所(2009年前)
通讯作者Wang QY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式
GB/T 7714
Wang QY,Tan LW,Wang J,et al. Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:4271-4274.
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