Knowledge Management System Of Institute of Semiconductors,CAS
| Controllable growth of semiconductor nanometer structures | |
| Wang ZG; Wu J; Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. | |
| 2003 | |
| 会议名称 | Conference on Low Dimensional Structures and Devices (LDSD) |
| 会议录名称 | MICROELECTRONICS JOURNAL, 34 (5-8) |
| 页码 | 379-382 |
| 会议日期 | DEC 08-13, 2002 |
| 会议地点 | FORTALEZA, BRAZIL |
| 出版地 | OXFORD FULFILLMENT CENTRE THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND |
| 出版者 | ELSEVIER ADVANCED TECHNOLOGY |
| ISSN | 0026-2692 |
| 部门归属 | chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
| 摘要 | Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alignment on InP(001) is discussed. (C) 2003 Elsevier Science Ltd. All rights reserved. |
| 关键词 | Inas Quantum Dots Self-organization Monolayer Coverage Density Gaas Islands Inp(001) Epitaxy |
| 学科领域 | 半导体材料 |
| 收录类别 | CPCI-S |
| 语种 | 英语 |
| 文献类型 | 会议论文 |
| 条目标识符 | http://ir.semi.ac.cn/handle/172111/14839 |
| 专题 | 中国科学院半导体研究所（2009年前） |
| 通讯作者 | Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. |
| 推荐引用方式 GB/T 7714 | Wang ZG,Wu J,Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.. Controllable growth of semiconductor nanometer structures[C]. OXFORD FULFILLMENT CENTRE THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER ADVANCED TECHNOLOGY,2003:379-382. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| 2814.pdf（249KB） | 限制开放 | -- | 请求全文 | |||
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