Influence of open-tube Ga diffusion on the characteristics for thyristor

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Influence of open-tube Ga diffusion on the characteristics for thyristor
	Wen RM; Pei SH; Wen RM Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1998
会议名称	Symposium on Power Semiconductor Materials and Devices
会议录名称	POWER SEMICONDUCTOR MATERIALS AND DEVICES, 483
页码	219-222
会议日期	DEC 01-04, 1997
会议地点	BOSTON, MA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-388-6
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.
学科领域	半导体材料
主办者	Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13877
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wen RM Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wen RM,Pei SH,Wen RM Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.. Influence of open-tube Ga diffusion on the characteristics for thyristor[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1998:219-222.

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