Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix
	Ma ZX; Liao XB; Zheng WM; Yu J; Chu JH; Ma ZX Chinese Acad Sci Inst Semicond Ctr Fis Mat Condensada State Key Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	4th International Conference on Thin Film Physics and Applications
会议录名称	FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086
页码	258-261
会议日期	MAY 08-11, 2000
会议地点	SHANGHAI, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3729-8
部门归属	chinese acad sci, inst semicond, ctr fis mat condensada, state key lab surface phys, beijing 100083, peoples r china
摘要	Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513-519cm(-1) after 1170 degreesC annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980cm(-1) of Si-O-Si stretching vibration at 1085cm(-1) in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesC. This sub-oxide phase is located at the interface between Si crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.
关键词	Nanocrystalline Silicon Raman Scattering Infrared Absorption Phonon Confinement Microcrystalline Silicon Polycrystalline Silicon Films
学科领域	半导体材料
主办者	Chinese Phys Soc.; Shanghai Phys Soc.; Natl Lab Infrared Phys.; Acad Sinica, Shanghai Inst Tech Phys.; Natl Nat Sci Fdn China.; SPIE.; Abdus Salam Int Ctr Theoret Phys.; Satis Vacuum Ind Vertriebs AG.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13713
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ma ZX Chinese Acad Sci Inst Semicond Ctr Fis Mat Condensada State Key Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Ma ZX,Liao XB,Zheng WM,et al. Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:258-261.

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