Analysis for the angle dependence of GaAs based RCE photodetectors
Liang K; Yang XH; Du Y; Wu RH; Liang K Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
2002
会议名称Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002)
会议录名称APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS, 4905
页码539-544
会议日期OCT 15-18, 2002
会议地点SHANGHAI, PEOPLES R CHINA
出版地1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者SPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-4694-7
部门归属chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40mn wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.
关键词Galnnas Resonant Cavity Enhanced Photodetectors Angle-selected Tuning
学科领域光电子学
主办者Chinese Opt Soc.; SPIE.; China Inst Commun.; Nortel Networks Ltd.; Santec Corp.; Walden Int.; JDS Uniphase Corp.; Agere Syst.; ZTE Corp.; Lovells.; Australia Opt Soc.; IEEE Commun Soc.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; SPIE Asia Pacific Chapters.; SPIE, Tech Grp Opt Networks.; Telecom World.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13695
专题中国科学院半导体研究所(2009年前)
通讯作者Liang K Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Liang K,Yang XH,Du Y,et al. Analysis for the angle dependence of GaAs based RCE photodetectors[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2002:539-544.
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