Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

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	Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy
	Lu LW; Ge WK; Sou IK; Wang J; Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB912 Beijing 100083 Peoples R China.
	2001
会议名称	6th International Conference on Solid-State and Integrated-Circuit Technology
会议录名称	SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS
页码	1446-1448
会议日期	OCT 22-25, 2001
会议地点	SHANGHAI, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-6520-8
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases.
关键词	Znste
学科领域	半导体材料
主办者	Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13683
专题	中国科学院半导体研究所（2009年前）
通讯作者	Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Lu LW,Ge WK,Sou IK,et al. Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2001:1446-1448.

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