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A novel high sensitivity CE-PTHPT for optical fiber communication | |
Guohui L; Yang R; Dejun H; Chengzhou J; Shucheng D; Eenjun Z; YiPing Z; Junming Z; Guohui L Beijing Normal Univ Inst Low Energy Nucl Phys Key Lab Beam Technol & Mat Modificat Beijing 100875 Peoples R China. | |
2001 | |
会议名称 | Asia-Pacific Optical and Wireless Communications Conference (APOC 2001) |
会议录名称 | APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580 |
页码 | 221-224 |
会议日期 | NOV 12-15, 2001 |
会议地点 | BEIJING, PEOPLES R CHINA |
出版地 | 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
出版者 | SPIE-INT SOC OPTICAL ENGINEERING |
ISSN | 0277-786X |
ISBN | 0-8194-4310-7 |
部门归属 | beijing normal univ, inst low energy nucl phys, key lab beam technol & mat modificat, beijing 100875, peoples r china; chinese acad sci, inst phys, beijing 100080, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, inst phys, beijing 100080, peoples r china |
摘要 | Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system. |
关键词 | Phototransistors Optical Fiber Communication Gaas Inp Heterojunction Phototransistor High-gain |
学科领域 | 光电子学 |
主办者 | SPIE.; China Opt & Optoelectr Manufacturers Assoc.; Minist Informat Ind.; China Inst Commun.; NEL NTT Electr Corp.; Credit Suisse First Boston Technol Grp.; China Telecom.; Huawei Technologies.; ZTE Corp.; SANY Optilayer Co Ltd.; Dateng Telecom.; Photon Technol.; O Net Commun Ltd.; China Minist Sci & Technol.; Alcatel.; Corning.; Australia Opt Soc.; Beijing Univ Posts & Telecommun.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; Photon Assoc.; SPIE Asia Pacific Chapters.; SPIE Tech Grp Opt Networks.; Tsinghua Univ. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/13663 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Guohui L Beijing Normal Univ Inst Low Energy Nucl Phys Key Lab Beam Technol & Mat Modificat Beijing 100875 Peoples R China. |
推荐引用方式 GB/T 7714 | Guohui L,Yang R,Dejun H,et al. A novel high sensitivity CE-PTHPT for optical fiber communication[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2001:221-224. |
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