Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template
	Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP; Wang, JX, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: jxwang@red.semi.ac.cn
	2006
会议名称	3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议录名称	JOURNAL OF RARE EARTHS
页码	24: 11-13 Sp. Iss. SI
会议日期	OCT 16-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA
出版者	METALLURGICAL INDUSTRY PRESS
ISSN	1002-0721
部门归属	chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china
摘要	The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.
关键词	Surface Morphology
学科领域	半导体材料
主办者	Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10028
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, JX, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: jxwang@red.semi.ac.cn
推荐引用方式 GB/T 7714	Liu, Z,Wang, JX,Wang, XL,et al. Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template[C]. 2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA:METALLURGICAL INDUSTRY PRESS,2006:24: 11-13 Sp. Iss. SI.

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