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Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 12, 页码: Art. No. 123705
Authors:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen J Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address: ewjfan@ntu.edu.sg
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Emission  Spectra  Lasers  8-band  
Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 11, 页码: Art. No. 113108
Authors:  Jia CH;  Chen YH;  Zhang WF;  Zhang WF Henan Univ Key Lab Photovolta Mat Henan Prov Kaifeng 475004 Peoples R China. E-mail Address: wfzhang@henu.edu.cn
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Pulsed-laser Deposition  Ferroelectric Properties  Electrical-properties  Structural-properties  Substrate  
The bipolar doping of ZnS via native defects and external dopants 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 11, 页码: Art. No. 113704
Authors:  Gai YQ;  Li JB;  Yao B;  Xia JB;  Gai YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: jbli@semi.ac.cn
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Augmented-wave Method  P-type Zno  Point-defects  Ii-vi  Nitrogen  Semiconductors  1st-principles  Compensation  Enhancement  
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 11, 页码: Art. No. 113921
Authors:  Sun LL;  Yan FW;  Zhang HX;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. E-mail Address: lilisuny@sohu.com
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Annealing  
Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 4, 页码: Art. No. 043709
Authors:  You JB;  Zhang XW;  Song HP;  Ying J;  Guo Y;  Yang AL;  Yin ZG;  Chen NF;  Zhu QS;  You JB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: jbyou@semi.ac.cn
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Light-emitting-diodes  Zno  Electroluminescence  Offsets  
Slow light at terahertz frequencies in surface plasmon polariton assisted grating waveguide 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 10, 页码: Art. No. 103715
Authors:  Zhang J;  Cai LK;  Bai WL;  Xu Y;  Song GF;  Song, GF, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail Address: sgf@semi.ac.cn
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Metamaterials  
Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 11, 页码: Art. No. 113712
Authors:  Zhang B;  Lu YW;  Song HP;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, B, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: zhangbiao@semi.ac.cn
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Aluminium Compounds  Effective Mass  Gallium Arsenide  Iii-v Semiconductors  Scf Calculations  Semiconductor Quantum Wires  Spectral Line Shift  Exchange Interaction  Energy  States  Absorption  Nanowires  Electrons  Subbands  Wells  Field  
Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: First-principles calculations 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 023910
Authors:  Shi HL;  Zhang P;  Li SS;  Xia JB;  Shi HL Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address: hlshi@semi.ac.cn
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Ferromagnetic Semiconductor  Band-structure  Stabilization  Injection  
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 8, 页码: Art. No. 083713
Authors:  Cai PF;  You JB;  Zhang XW;  Dong JJ;  Yang XL;  Yin ZG;  Chen NF;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Annealing  Carrier Density  Carrier Mobility  Diffusion  Electrical Conductivity  Electrical Resistivity  Hydrogen  Ii-vi Semiconductors  Impurity States  Interstitials  Light Transmission  Plasma Materials Processing  Semiconductor Thin Films  Sputter Deposition  Vacancies (Crystal)  Visible Spectra  Wide Band Gap Semiconductors  Zinc Compounds  
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 1, 页码: Art. No. 013911
Authors:  Lu J;  Meng HJ;  Deng JJ;  Xu PF;  Chen L;  Zhao JH;  Jia QJ;  Zhao JH Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: jhzhao@red.semi.ac.cn
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Annealing  Gallium Arsenide  Iron  Magnetic Anisotropy  Magnetic Epitaxial Layers  Magnetisation  Molecular Beam Epitaxial Growth  Transmission Electron Microscopy  X-ray Diffraction