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控制自组织铟镓砷量子点成核的生长方法 专利
专利类型: 发明, 申请日期: 2009-09-23, 公开日期: 4007
Inventors:  梁凌燕;  叶小玲;  金 鹏;  陈涌海;  徐 波;  王占国 
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Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103108
Authors:  Tang CG;  Chen YH;  Xu B;  Ye XL;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Aluminium Compounds  Gallium Arsenide  Iii-v Semiconductors  Internal Stresses  Reflectivity  Semiconductor Heterojunctions  Semiconductor Quantum Wells  
Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 5, 页码: Art. No. 055310
Authors:  Liang S;  Zhu HL;  Ye XL;  Pan JQ;  Zhao LJ;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Chemical-vapor-deposition  Multiatomic Steps  Islands  Growth  Fabrication  Epitaxy  
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
Authors:  Liang S;  Zhu HL;  Ye XL;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: liangsong@red.semi.ac.cn
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Photoluminescence  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide