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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.16108
Authors:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW;  Wang GH;  Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
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Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe  
Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.20703
Authors:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y;  Zhu B;  Wang J;  Ni HQ;  He JF;  Wang GW;  Niu ZC;  Wang, XP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. xpwang@semi.ac.cn
Adobe PDF(634Kb)  |  Favorite  |  View/Download:1303/265  |  Submit date:2011/07/05
V-groove Substrate  Quantum Wires  Gaas  Epitaxial-growth  Transistor  
Correlation measurement of quantum cascade photons in single InAs quantum dot 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.17804
Authors:  Li YA;  Dou XM;  Chang XY;  Ni HQ;  Niu ZC;  Sun BQ;  Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. bqsun@red.semi.ac.cn
Adobe PDF(692Kb)  |  Favorite  |  View/Download:1021/245  |  Submit date:2011/07/05
Single Quantum Dot  Exciton And biExciton  Photoluminescence Spectrum  Cascade Emission  
Single-photon interference based on a single InAs quantum dot 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 3, 页码: Article no.37809
Authors:  Li YA;  Dou XM;  Chang XY;  Ni HQ;  Niu ZC;  Sun BQ;  Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. bqsun@red.semi.ac.cn
Adobe PDF(1186Kb)  |  Favorite  |  View/Download:1008/173  |  Submit date:2011/07/05
Single Quantum Dot  Antibunching Effect  Mach-zehnder Interferometer  Light  Resonance  
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.28101
Authors:  Su SJ;  Wang W;  Zhang GZ;  Hu WX;  Bai AQ;  Xue CL;  Zuo YH;  Cheng BW;  Wang QM;  Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. cbw@red.semi.ac.cn
Adobe PDF(650Kb)  |  Favorite  |  View/Download:1305/300  |  Submit date:2011/07/05
Gesn  Ge  Molecular Beam Epitaxy  Epitaxial Growth  Semiconductors  Ge(001)2x1  
A new method to measure the carrier concentration of p-GaN 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 3, 页码: Article no.37804
Authors:  Zhou M;  Zhao DG;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(1225Kb)  |  Favorite  |  View/Download:957/194  |  Submit date:2011/07/05
P-gan  Carrier Concentration Measurement  Ultraviolet Photodetector  Laser-diodes  Films  
Simulation research on the control of terahertz beam direction by surface plasmon 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.14220
Authors:  Hu HF;  Cai LK;  Bai WL;  Zhang J;  Wang LN;  Song GF;  Song, GF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. sgf@semi.ac.cn
Adobe PDF(432Kb)  |  Favorite  |  View/Download:1475/611  |  Submit date:2011/07/06
Surface Plasmon  Terahertz  Finite Difference Time Domain  Beam Direction Control  Subwavelength Apertures  Transmission  Radiation  
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 5, 页码: Article no.56104
Authors:  Tang HM;  Zheng ZS;  Zhang EX;  Yu F;  Li N;  Wang NJ;  Li GH;  Ma HZ;  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
Adobe PDF(1182Kb)  |  Favorite  |  View/Download:1028/289  |  Submit date:2011/07/06
Separation By Oxygen Implantation  Buried Oxide  Nitrogen Implantation  Positive Charge Density  Radiation Hardness  Implanting Nitrogen  Ion-implantation  Improvement  Technology  Oxygen  Layer  
High-frequency modulation, high-power and narrow-linewidth distributed feedback fiber laser 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.14213
Authors:  Xue LF;  Zhang QA;  Li F;  Zhou Y;  Liu YL;  Xue, LF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lfxue@semi.ac.cn
Adobe PDF(282Kb)  |  Favorite  |  View/Download:1471/633  |  Submit date:2011/07/06
Distributed Feedback Fiber Laser  Narrow-linewidth  High-power  High-frequency Modulation  Gratings  
Accurate determination of electronic transition energy of carbon nanotubes from the resonant behavior of radial breathing modes and their overtones 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 11, 页码: 7966-7973
Authors:  Zhang J (Zhang Jun);  Tan PH (Tan Ping-Heng);  Zhao WJ (Zhao Wei-Jie);  Tan, PH, Chinese Acad Sci, Inst Semicond, State Key Lab SupperLattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
Adobe PDF(1253Kb)  |  Favorite  |  View/Download:1222/209  |  Submit date:2010/12/27
Single Walled Carbon Nanotubes  Radial Breathing Modes  Resonant Raman Scattering  Electronic Transition Energy  Stokes-raman Scattering  Vibrational-modes  Graphite  Diameter  Spectra